BRINKEVICH, D., S. VABISHCHEVICH, V. PROSOLOVICH, and Y. YANKOVSKI. “MODIFICATION OF THE SURFACE LAYERS OF SILICON SINGLE CRYSTALS IMPLANTED WITH B+ AND P+ IONS AT THE CREATION OF SEMICONDUCTOR DEVICES BY CMOS TECHNOLOGY”. Vestnik of Polotsk State University. Part C. Fundamental Sciences, no. 4 (March 30, 2015): 55-59. Accessed July 3, 2024. https://journals.psu.by/fundamental/article/view/5585.