BRINKEVICH D, VABISHCHEVICH S, PROSOLOVICH V, YANKOVSKI Y. MODIFICATION OF THE SURFACE LAYERS OF SILICON SINGLE CRYSTALS IMPLANTED WITH B+ AND P+ IONS AT THE CREATION OF SEMICONDUCTOR DEVICES BY CMOS TECHNOLOGY. Вестник Полоцкого государственного университета. Серия С. Фундаментальные науки [Internet]. 2015Mar.30 [cited 2024May20];(4):55-9. Available from: https://journals.psu.by/fundamental/article/view/5585