ELECTROPHYSICAL PARAMETERS INTERRELATION MODEL FOR CAD SYSTEMS
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Abstract
A model is presented and regularities are established for the relationship between the electrophysical parameters of a transistor structure and a two-dimensional channel, based on the self-consistency of the electrochemical potential and the concentration of charge carriers of a two-dimensional channel in a field-effect transistor structure. Such self-consistency is ensured by combining the Fermi – Dirac statistics with the condition of electrical neutrality of the transistor structure. The effect on the electrophysical parameters of a transistor structure with a two-dimensional semiconductor channel is considered for the band gap of the channel material, the capacitance of the gate dielectric, and the capacitance of interface states. The developed model of the relationship between the electrophysical parameters of a transistor structure with a two-dimensional channel can be used in computeraided design systems for the element base of micro- and nanoelectronics.
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