PATTERN FORMATION IN SILICON NITRIDE FILM
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Abstract
The formation of a pattern in a silicon nitride film includes the application of a silicon dioxide film, a silicon nitride film by chemical vapor deposition from a vapor phase, a photoresistive mask by the method of standard photolithography, reactive-ion etching of silicon nitride in a fluorine-containing plasma, and the removal of a photoresistive mask on a semiconductor substrate with topological elements. To increase the selectivity of silicon nitride etching with respect to dioxide, prevent microtrenching and improve the quality of the photolithographic pattern after the formation of a silicon nitride film, the film is treated with 1–5 pulses of near infrared radiation with a duration of 0,05 to 0,5 s at an intensity of 0,2 to 1,0 J/cm2.
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