STRENGTH PROPERTIES OF PHOTORESISTS FOR EXPLOSIVE LITHOGRAPHY
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Abstract
The adhesion and strength properties of NFR 016b4 photoresist (PR) films for explosive lithography deposited on the surface of KDB-10 single-crystal silicon wafers by centrifugation have been studied. It has been found that they behave like brittle materials. The FR microhardness measured at low loads was ~0,3 GPa, decreasing slightly with increasing film thickness. The crack resistance parameters (fracture toughness coefficient K1С and effective fracture energy γ) at low loads do not depend on the film thickness. With increasing load, the crack resistance of a thin film increased faster than that of a thick one. The specific peeling energy G under normal loading was ~1,2 J/m2 for thick and ~0,7 J/m2 for thin films. The higher values of G for thick films are most likely due to the compensation of elastic stress fields arising at the photoresist/silicon interface. The strength properties of NFR 016b4 explosive lithography photoresist and FP9120 positive diazoquinone-novolac photoresist are compared.
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References
Borisenko, V. E., & Tolochko, N. K. (Eds.). (2008). Nanomaterialy i nanotekhnologii. [Nanomaterials and Nanotechnologies] (109–110). Minsk: Belarusian State University. (In Russ.).
Brinkevich, D. I., Kharchenko, A. A., Prosolovich, V. S., Odzhaev, V. B., Brinkevich, S. D., & Yankovskii Yu. N. (2019). Modifikatsiya spektrov otrazheniya plenok diazokhinon-novolachnogo fotorezista pri implantatsii ionami bora i fosfora [Modification of reflectance spectra of films of diazoquinone-novolac photoresist upon implantation with boron and phosphorus ions]. Mikroelektronika [Microelectronics], 48(3), 235–239. (In Russ., abstr. in Engl.).
Brinkevich, D. I., Vabishchevich, N. V., & Vabishchevich, S. A. (2010). Fiziko-mekhanicheskie svoistva epitaksial'nykh sloev GaP [Physical and mechanical properties of GaP epitaxial layers]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (9), 92–97. (In Russ., abstr. in Engl.).
Kolesnikov, Yu. V., & Morozov, E. M. (1989) Mekhanika kontaktnogo razrusheniya [Contact fracture mechanics]. Moscow: Nauka. (In Russ.).
Malzbendera, J., den Toonderb, J. M. J., Balkenendeb, A. R., & de Witha, G. (2002) Measuring mechanical properties of coatings: a methodology applied to nano-particle-filled sol-gel cjating on glass. Materials Science and Engineering: R, 36(2-3), 47–103. DOI: 10.1016/S0927-796X(01)00040-7.
Brinkevich, D. I., Vabishchevich, S. A., Petlitskii, A. N., & Prosolovich, V. S. (2006). Defekty upakovki, mikrotverdost' i mikrokhrupkost' v plastinakh kremniya, obuslovlennye termoobrabotkoi [Packing defects, microhardness and microbrittleness in silicon wafers caused by heat treatment]. Materialy, tekhnologii, instrumenty [Packing defects, microhardness and microbrittleness in silicon wafers caused by heat treatment], 11(1), 48–50. (In Russ.).
Vabishchevich, S. A., Brinkevich, S. D., Prosolovich, V. S., Vabishchevich, N. V., & Brinkevich, D. I. (2020). Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon. Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques, 14(6), 1352–1357. DOI: 10.1134/S1027451020060476.
Vabishchevich, N. V., Vabishchevich, S. A., Brinkevich, D. I., Volobuev, V. S., Lukashevich, M. G., Odzhaev, V. B., & Prosolovich, V. S. (2011). Mikroindentirovanie struktur fotopolimer-kremnii [Microindentation of photopolymer-silicon structures]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (4), 77–83. (In Russ., abstr. in Engl.).
Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, D. I., & Prosolovich, V. S. (2020). Fiziko-mekhanicheskie svoistva obluchennykh plenok diazokhinon-novolachnogo fotorezista na kremnii [Physical and mechanical properties of irradiated films of diazoquinone-novolac photoresist on silicon]. Vestnik Polotskogo gosudarstvennogo universiteta.Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (12), 60–64. (In Russ., abstr. in Engl.).
Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, D. I., Prosolovich, V. S., Yankovskii, Yu. N., & Brinkevich, S. D. (2016). Prochnostnye svoistva struktur fotorezist–kremnii, γ-obluchennykh i implantirovannykh ionami В+ i Р+ [Strength properties of photoresist–silicon structures γ-irradiated and implanted with B+ and P+ ions]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (12), 30–36. (In Russ., abstr. in Engl.).
Vabishchevich, S. A., Brinkevich, S. D., Vabishchevich, N. V., Brinkevich, D. I., & Prosolovich, V. S. (2021). Adhesion of Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon. High Energy Chemistry, 55(6), 495–501.
Vabishchevich, S. A., Brinkevich, S. D., Brinkevich, D. I., & Prosolovich, V. S. (2020). Adgeziya k monokristallicheskomu kremniyu plenok diazokhinon-novolachnogo fotorezista, implantirovannykh ionami bora i fosfora [Adhesion to single-crystal silicon of diazoquinone-novolac photoresist films implanted with boron and phosphorus ions]. Khimiya vysokikh energii [High Energy Chemistry], 54(1), 54–59. (In Russ., abstr. in Engl.).