REFLECTION SPECTRA OF Γ-IRRADIATED FILMS OF DIAZOQUINONE-NOVOLAK PHOTORESIST
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Abstract
Measuring the reflectance spectra were studied by γ-rays irradiated 60Co films positive photoresist FP9120 1,8 microns thick, deposited on the surface of silicon wafers brand KDB-10 (111) by centrifugation. It is shown that irradiation 60Co γ-rays leads to the formation of the modified polymer layer having a refractive index different from the bulk. A no monotonic dependence of the refractive index of the surface layer of photoresist with increasing radiation dose, due to the change of the molar mass of the polymer during irradiation.
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