FILMS OF POSITIVE DIAZOQUINONE-NOVOLAC PHOTORESIST FP9120 IMPLANTED WITH SILVER IONS
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Abstract
Films of positive diazoquinone-novolac photoresist FP9120 1,8 μm thick, implanted with Ag+ ions with an energy of 30 keV in the dose range of 2,5∙1016 – 1,0∙1017 cm–2, were studied by indentation using an ILU-3 implanter. It has been established that a freshly prepared film of the positive photoresist FP9120 on silicon exhibits elastic-plastic properties and, after its indentation, an elastic recovery of the imprint is observed. The carbonized layer formed during ion implantation of Ag+ with doses above 2,5∙1016 cm–2 suppresses the effect of imprint restoration during indentation. After long-term storage (more than 3 years), the film changes its strength properties and behaves like a solid (non-plastic) body. This is due to the cross-linking of phenol-formaldehyde resin molecules, which reduces the mobility of molecules under external influence. A continuous diamond-like carbonized layer formed in the range of ions. when implanted with Ag+ ions, it contributes to an increase in the values of the true microhardness of the photoresistive film after long-term storage.
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References
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