OPTICAL AND ELECTRICAL PROPERTIES OF GETEROSTRUCTURE BASED LIGHT EMMITING DIDODES AFTER FAST ELECTRON IRRADIATION
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Abstract
An influence of fast electron irradiation (4 MeV) on the electrical and optical properties of light emitting diodes (LEDs) on the basis of nitride and phosphide heterostructures have been studies. The features of volt-ampere characteristics, electroluminescence spectra and thermal characteristics of LEDs after irradiation have been established. The wide band at ~ 2 eV in electroluminescence spectra of ultraviolet and blue LED related to polymer lens damage has been found. The recovery of optical power during LED operating following to monomolecular first order reaction has been observed.
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Y. BUMAI, Belarusian National Technical University, Minsk
канд. физ.-мат. наук, доц.
D. BOBUCHENKO, Belarusian National Technical University, Minsk
канд. физ.-мат. наук, доц.
S. VABISHCHEVICH, Polotsk State University
канд. физ.-мат. наук, доц.
S. LASTOVSKII, ГО «Научно-практический центр НАН Беларуси по материаловедению», Минск
канд. физ.-мат. наук
U. TROPHIMOV, РНПУП «Центр светодиодных и оптоэлектронных технологий НАН Беларуси», Минск
канд. техн. наук
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