STRENGTH PROPERTIES OF DIAZOQUINONE PHOTORESIST FP9120 FILMS ON MONOCRYSTALLINE SILICON IMPLANTED WITH ANTIMONY IONS
Article Sidebar
Main Article Content
Abstract
The modification of the strength properties of films implanted with Sb+ ions of diazoquinone-novolac photoresist FP9120 on monocrystalline silicon during long-term storage was investigated by the indentation method. The dependence of microhardness on the load after implantation was nonmonotonic, due to the presence of elastic stresses at the photoresist/silicon interface. During long-term storage, their relaxation was observed, which leads to the disappearance of the non-monotonicity of the microhardness dependences on the load. The crosslinking of phenol-formaldehyde resin molecules during long-term storage was also noted. This process was stimulated by the decomposition of diazoquinone during ion implantation. During storage, the implanted photoresistive film becomes less susceptible to elastoplastic recovery after the load is removed.
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
References
Moreau, W. M. (1988). Semiconductor Lithography: Principles, Practices, and Materials. N.Y.; London: Plenum Press.
Brinkevich, D. I., Brinkevich, S. D., & Prosolovich, V. S. (2022). Ion Implantation in Diazoquinone–Novolac Photoresist. High Energy Chemistry, 56(4), 270–276. DOI: 10.1134/s0018143922040051.
Kondyurin, A., Bilek, M. (2015). Ion beam treatment of polymers: application aspects from medicine to space. Elsevier.
Brinkevich, D. I., Prosolovich, V. S., & Jankovskij, Ju. N. (2020). Modifikacija plenok diazohinonnovolachnogo fotorezista implantaciej ionov bora [Modification of diazoquinone-novolac photoresist films by boron ion implantation]. Zhurnal Belorusskogo gosudarstvennogo universiteta. Fizika [Journal of the Belarusian State University. Physics], (2), 62–69. DOI: 10.33581/2520-2243-2020-2-62-69.
Brinkevich D. I., Brinkevich S. D., Vabishchevich N. V., Odzhaev V. B., & Prosolovich V. S. (2014). Ion implantation of positive photoresists. Russian Microelectronics, 43(3), 194–200. DOI: 10.1134/S106373971401003X.
Vabishchevich, N., Brinkevich, D., Volobuev, V., Lukashevich, M., Prosolovich, V., Sidorenko, Yu., … Partyka, J. (2011). Structure and electron-transport properties of photoresist implanted by Sb+ ions. In J. Żuk & M. Turek (Eds.), Proc. of the VIII Intern. Conf. Ion Implantation and Other Applications of Ions and Electrons: Acta Physica Polonica A, vol. 120, iss. 1 (46–48). Warsaw: Institute of Physics PAS.
Kharchenko, A. A., Brinkevich, D. I., Prosolovich, V. S., Brinkevich, S. D., Odzaev, V. B., & Yankovski, Yu. N. (2020). Radiation-Stimulated Transformation of the Reflectance Spectra of Diazoquinone–Novolac Photoresist Films Implanted with Antimony Ions. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 14(3), 558–561. DOI: 10.1134/S1027451020030283.
Brinkevich, S. D., Brinkevich, D. I., & Prosolovich, V. S. (2021). Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions. Russian Microelectronics, 50(1), 33–38. DOI: 10.1134/S1063739720060025.
Vabishchevich, N. V., Vabishchevich, S. A., Brinkevich, D. I., Volobuev, V. S., Lukashevich, M. G., Odzhaev, V. B., & Prosolovich, V. S. (2011). Mikroindentirovanie struktur fotopolimer – kremnii [Microindentation of Photopolymer-Silicon Structures]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (4), 77–83. (In Russ., abstr. in Engl.).
Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, D. I., Prosolovich, V. S., Kolos, V. V., & Zubova, O. A. (2022). Prochnostnye svoistva fotorezistov dlya vzryvnoi litografii [Strength Properties of Photoresists for Explosive Lithography]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (4), 49–55. DOI: 10.52928/2070-1624-2022-38-4-49-55. (In Russ., abstr. in Engl.).
Brinkevich, D. I., Vabishchevich, N. V., & Vabishchevich, S. A. (2010). Fiziko-mekhanicheskie svoistva epitaksial'nykh sloev fosfida galliya [Physicomechanical Properties of Epitaxial Layers Gallium Phosphide]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (9), 92–97. (In Russ., abstr. in Engl.).
Brinkevich D. I., Vabishhevich N. V., & Vabishhevich S. A. (2012). Mikroprochnostnye svoistva monokristallicheskogo kremniya, vyrashchennogo pri nalozhenii na rasplav slozhnykh elektromagnitnykh polei [Microstrength Properties of Silicon Single Crystal Received from the Melt Under the Influence of Combined Magnetic Fields]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (4), 77–82. (In Russ., abstr. in Engl.).
Vabishhevich, S. A., Vabishhevich, N. V., Brinkevich, D. I. Prosolovich, V. S., Shuljakovskaja, M. B., Kolos, V. V., & Zubova, O. A. (2024). Obluchennye elektronami plenki poliimida PI2610 na monokristallicheskom kremnii [Electron Irradiated PI2610 Polyimide Films on Monocrystalline Silicon]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], 1(42), 41–46. DOI: 10.52928/2070-1624-2024-42-1-41-46.
Vabishhevich, S. A., Vabishhevich, N. V., Brinkevich, D. I., & Prosolovich, V. S. (2023). Indentirovanie obluchennyh elektronami plenok diazokhinon-novolachnyh fotorezistov na kremnii [Indentation of Electron-Irrauded Films of Diazoquinone Novolac Photoresists On Silicone]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], 1(40), 29–37. DOI: 10.52928/2070-1624-2023-40-1-29-37.
Vabishchevich, S. A., Brinkevich, S. D., Brinkevich, D. I., & Prosolovich, V. S. (2020). Adhesion of diazoquinon-novolac photoresist films with implanted boron and phosphorus ions to single-crystal silicon. High energy chemistry, 54(1), 46–50. DOI: 10.1134/S0018143920010129.
Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, S. D., Brinkevich, D. I., Prosolovich, V. S., & Lastovskii, S. B. (2024). Adhesion of Electron-Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon. High Energy Chemistry, 58(1), 112–119. DOI: 10.1134/S001814392401017X.
Debmalya, R., Basu, P. K., Raghunathan, P., & Eswaran, S. V. (2003). DNQ-novolac photoresist revisited: 1H and 13C NMR evidence for a novel photoreaction mechanism. Magnetic resonance in chemistry, 41(2), 84–90. DOI: 10.1002/mrc.1134.
Brinkevich, D. I., Grinyuk, E. V., Brinkevich, S. D., Prosolovich, V. S., Kolos, V. V., Zubova, O. A., & Lastovskii, S. B. (2024). Fourier-IR spectroscopy of photoresist/silicon structures for explosive lithography. Journal of Applied Spectroscopy, 90(6), 1223–1228. DOI: 10.1007/s10812-024-01657-4.
Most read articles by the same author(s)
- S. VABISHCHEVICH, A. VASUKOV, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, ATOMIC-POWER MICROSCOPY OF FILMS OF POSITIVE DIAZOKHINONNOVOLACHNY PHOTORESIST IMPLANTED BY BORON IONS , Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 12 (2018)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, M. TARASIK, THE LIFETIME OF CHARGE CARRIERS IN PLATES OF SINGLE CRYSTALLINE SILICON WITH FILMS OF A DIAZOQUINON-NOVOLAC PHOTORESIST, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2021)
- A. VASUKOV, S. VABISHCHEVICH, N. SUKHOVILO, N. VABISHCHEVICH, RESEARCH OF SURFACE OF ASPHALTENES BY ATOMIC-POWER MICROSCOPY, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2020)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, INDENTATION OF ELECTRON-IRRAUDED FILMS OF DIAZOQUINONE NOVOLAC PHOTORESISTS ON SILICONE, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2023)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, RADIATION-INDUCED PROCESSES IN PYROLITIC GRAPHITE FILMS USED IN THE COMMERCIAL CYCLOTRON BEAM OUTPUT SYSTEM, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 12 (2019)
- S. RAHOUSKI, V. TANANA, N. VABISHCHEVICH, S. VABISHCHEVICH, IMAGE PROCESSING FOR DETERMINING STRENGTH PARAMETERS OF POLYMER FILMS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2021)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, CRACK RESISTANCE OF DIAZOQUINONE-NOVOLACH PHOTORESIST FILMS ON MONOCRYSTALLINE SILICON PLATES, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2021)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, V. KOLOS, O. ZUBOVA, STRENGTH PROPERTIES OF ELECTRON IRRADIATED FILMS OF NEGATIVE NOVOLAC PHOTORESISTS ON MONOCRYSTALLINE SILICON, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 2 (2023)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, M. LUKASHEVICH, A. YUSHCHIK, A. KHARCHENKO, POLYIMIDE FILMS IMPLANTED BY MANGANESE IONS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2024)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, INTERACTION OF THE INDENTOR WITH FILMS OF COPOLYMERS ON THE BASIS OF METHYLMETHACRYLATE, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2016)