KMP E3502 NEGATIVE PHOTORESIST FILMS ON SILICON
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Abstract
Films of KMP E3502 negative photoresists with a thickness of 2.6–6.0 μm, deposited onto the surface of silicon wafers by centrifugation, were studied using the indentation method. Stabilizing treatment leads to uniform and homogeneous removal of residual solvent from the film. At the same time, the film becomes denser, which increases its strength and decreases its elastic-plastic properties; no significant change in the film homogeneity is observed. Also, the stabilizing treatment improves the adhesion of the KMP E3502 photoresist to the silicon substrate and leads to an increase in the microhardness values by ~ 1.5 times. After ion etching, a sharp increase in the heterogeneity of the photoresist film and strong structuring of the film surface are observed, with the appearance of a continuous array of irregularities with dimensions of ~ 10 μm. The microhardness values after ion etching increase by 2.2 times compared to the initial film, while an explosive increase (more than 200 times) in the dispersion of the distribution of microhardness values is observed. In ion-etched films, the distribution of microhardness values broadens significantly and deviates radically from Gaussian. This is due to the explosive nature of the evaporation of residual photoresist molecules, leading to "swelling" of the photoresist film.
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References
Наноматериалы и нанотехнологии / Под ред. В. Е. Борисенко, Н. К. Толочко – Мн.: Изд. центр БГУ, 2008. – С. 109–110.
Прочностные свойства фоторезистов для взрывной литографии / С. А. Вабищевич, Н. В. Вабищевич, Д. И. Бринкевич и др. // Вестник Полоцкого государственного университета. Серия С, Фундаментальные науки. – 2022. – № 4. – C. 49–55. – DOI: 10.52928/2070-1624-2022-38-4-49-55.
Индентирование пленок негативных фоторезистов для обратной литографии / С. А. Вабищевич, Д. И. Бринкевич, В. С. Просолович и др. // Вестник Полоцкого государственного университета. Серия С, Фундаментальные науки. – 2025. – № 1(44). – C. 53–60. – DOI: 10.52928/2070-1624-2025-44-1-53-60.
Модификация спектров отражения пленок диазохинон-новолачного фоторезиста при имплантации ионами бора и фосфора / Д. И. Бринкевич, А. А. Харченко, В. С. Просолович и др. // Микроэлектроника – 2019. – Т. 48, № 3. – С. 235–239. – DOI: 10.1134/S0544126919020029.
Stabilizing Treatment of Negative Photoresist Films of the AZ nLOF20XX Series on Silicon / V. S. Prosolovich, D. I. Brinkevich, E. V. Grinyuk et al. // Russian Microelectronics. – 2025. – Vol. 54, iss. 6. – Р. 589–594. – DOI: 10.1134/S106373972560089X.
Adhesion of Irradiated Diazoquinone-Novolac Photoresist Films to Single-Crystal Silicon / S. A. Vabishchevich, S. D. Brinkevich, N. V. Vabishchevich et al. // High Energy Chemistry. – 2021. – Vol. 55, iss. 6 – P. 495–501. – DOI: 10.1134/S0018143921060151.
Лапшинов Б. А. Технология литографических процессов: учеб. пособие. – М.: МИЭМ, 2011. – 95 с.
Влияние фоновых примесей на формирование дефектов упаковки в пластинах кремния / Д. И. Бринкевич, В. С. Просолович, С. А. Вабищевич, А. Н. Петлицкий // Микроэлектроника. – 2006. – Т. 35, № 2. – С. 112–116.
Прочностные свойства нейтронно-облученных эпитаксиальных пленок CdTe / А. Т. Акобирова, С. А. Вабищевич, Н. В. Вабищевич и др. // Журнал БГУ. Физика. – 2018. – № 1. – С.73–79.
Пленки фоторезистов серии AZ nLOF на монокристаллическом кремнии / Д. И. Бринкевич, Е. В. Гринюк, В. С. Просолович и др. // Микроэлектроника. – 2025. – Т. 54, № 1. – С. 55–63. – DOI: 10.31857/S0544126925010068.
Transformation of the Spectra of a Attenuated Total Reflection when Drying a Diazoquinone-Novolach Photoresist / D. I. Brinkevich, S. D. Brinkevich, A. N. Petlitsky, V. S. Prosolovich // Russian Microelectronics. – 2021. – Vol. 50, iss. 4. – Р. 239–245. – DOI: 10.1134/S106373972104003X.
Fourier-IR spectroscopy of photoresist/silicon structures for explosive lithography / D. I. Brinkevich, E. V. Grinyuk, S. D. Brinkevich et al. // Journal of Applied Spectroscopy. – 2024. – Vol. 90, iss. 6, – P. 1223–1228. – DOI: 10.1007/s10812-024-01657-4.
Пленки негативного фоторезиста AZ nLOF 5510, облученные электронами / С. А. Абрамов, Д. И. Бринкевич, В. С. Просолович и др. // Вестник Полоцкого государственного университета. Серия С, Фундаментальные науки. – 2025. – № 1(44). – C. 39–46. – DOI: https://doi.org/10.52928/2070-1624-2025-44-1-39-46.
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