INDENTATION OF ELECTRON-IRRAUDED FILMS OF DIAZOQUINONE NOVOLAC PHOTORESISTS ON SILICONE
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Abstract
The strength properties of FP9120, SPR 700 and S1813 G2 SP15 diazoquinone novolac photoresist films on silicon irradiated by 5 MeV electrons with a fluence of 3·1016 cm-2 were studied by indentation. Misprints of the microindenter in films of diazaquinone novolac photoresist are barrel-shaped, which indicates the presence of tensile stresses that form during film drying. A destruction zone with radial and lateral cracks was observed
around the indenter prints, forming a pattern in the form of "butterflies". It has been established that during longterm storage and irradiation of films of diazoquinone novolac photoresists, an increase in the values of the true microhardness of the films takes place, which is due to the cross-linking of novolac macromolecules in the bulk of the polymer.
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References
Pirs, K., Adams, A., Kats, L., Tsai, Dzh., Seidel, T., Makgillis, D. & Zi, S. (Ed.). (1986). Tekhnologiya SBIS: v 2-h kn. Kn. 1. – M: Mir. (In Russ.).
Brinkevich, S. D., Brinkevich, D. I., Prosolovich, V. S., Lastovskii, S. B., & Pyatlitski, A. N. (2021). Frustrated Total Internal Reflection Spectra of Diazoquinone–Novolac Photoresist Films. J. of Applied Spectroscopy, 87(6), 1072–1078. DOI: 10.1007/s10812-021-01111-9.
Brinkevich, D. I., Vabishchevich, N. V., & Vabishchevich, S. A. (2010). Fiziko-mekhanicheskie svoistva epitaksial'nykh sloev fosfida galliya [Physicomechanical Properties of Epitaxial Layers Gallium Phosphide]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (9), 92–97.
Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, D. I., & Prosolovich, V. S. (2020). Fiziko-mekhanicheskie svoistva obluchennykh plenok diazokhinon-novolachnogo fotorezista na kremnii [Physical and Mechanical Properties of Irradiated Films of Diazoquinone-Novolach Photoresist on Silicon]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (12), 60–64.
Vabishchevich, S. A., Brinkevich, S. D., Vabishchevich, N. V., Brinkevich, D. I., & Prosolovich, V. S. (2021). Adhesion of Irradiated Diazoquinone-Novolac Photoresist Films to Single-Crystal Silicon. High Energy Chemistry, 55(6), 495–501. DOI: 10.1134/S0018143921060151.
Brinkevich, D. I., Brinkevich, S. D., & Prosolovich, V. S. (2022). Ionnaya implantatsiya diazokhinonnovolachnogo fotorezista. Khimiya vysokikh energii [High Energy Chemistry], 56(4), 270–276. (In Russ.).
Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, D. I., Prosolovich, V. S., Yankovskii, Yu. N., & Brinkevich, S. D. (2016). Prochnostnye svoistva struktur fotorezist-kremnii, γ-obluchennykh i implantirovannykh ionami V+ i R+ [Strength Properties of Photoresist-Silicon Structures, γ-Irradiated and Implanted by B+ and P+ Ions]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (12), 30–36. (In Russ., abstr. in Engl.).
Brinkevich, D. I., Brinkevich, S. D., Vabishchevich, N. V., Odzhaev, V. B. & Prosolovich, V. S. (2014). Ion implantation of positive photoresists. Russian Microelectronics, 43(3), 194–200. DOI: 10.1134/S106373971401003X.
Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, D. I., Brinkevich, S. D., & Prosolovich, V. S. (2016). Mikrotverdost' plenok sopolimerov na osnove metilmetakrilata, obluchennykh γ-kvantami [Microhardness of γ-Irradiated Films of Copolymers Based on Methyl Methacrylate]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (12), 51–57.
Kharchenko, A. A., Brinkevich, D. I., Prosolovich, V. S., Brinkevich, S. D., Odzhaev, V. B., & Yankovskii, Yu. N. (2020). Radiation-Stimulated Transformation of the Reflectance Spectra of Diazoquinone–Novolac Photoresist Films Implanted with Antimony Ions. J. of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 14(3), 558–561. DOI: 10.1134/S1027451020030283.
Vabishchevich, S. A., Vabishchevich, N. V., & Brinkevich, D. I. (2010). Fiziko-mekhanicheskie svoistva kremniya, obluchennogo elektronami i neitronami [Physical-Mechanical Properties of Silicon Implanted by Electrons and Neutrons]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (3), 109–114. (In Russ., abstr. in Engl.).
Livesay, W. R., Rubiales, A. L., Ross, M. F., Woods, S. C., & Campbell, S. (1993). Electron beam hardening of photo resist. In Proc. SPII 1925, Advances in Resist Technology and Processing X (15.09.1993). DOI: 10.1117/12.154778.
Oleshkevich, A. N., Lapchuk, N. M., Odzhaev, V. B., Karpovich, I. A., Prosolovich, V. S., Brinkevich, D. I., & Brinkevich, S. D. (2020). Electronic Conductivity in a Р+-Ion Implanted Positive Photoresist. Russian Microelectronics, 49(1), 55–61.
Mel'nikov, M. Ya. (Ed.). (2009). Eksperimental'nye metody khimii vysokikh energii, 169–177. Moscow: Publ. MGU. (In Russ.).
Brinkevich, S. D., Grinyuk, E. V., Brinkevich, D. I., Sverdlov, R. L., Prosolovich, V. S., & Pyatlitski, A. N. (2020). Mechanism of the Adhesive Interaction of Diazoquinone-Novolac Photoresist Films with Monocrystalline Silicon. J. of Applied Spectroscopy, 87(4), 647–651. DOI: 10.1007/s10812-020-01049-4.