INDENTATION OF ELECTRON-IRRAUDED FILMS OF DIAZOQUINONE NOVOLAC PHOTORESISTS ON SILICONE
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Abstract
The strength properties of FP9120, SPR 700 and S1813 G2 SP15 diazoquinone novolac photoresist films on silicon irradiated by 5 MeV electrons with a fluence of 3·1016 cm-2 were studied by indentation. Misprints of the microindenter in films of diazaquinone novolac photoresist are barrel-shaped, which indicates the presence of tensile stresses that form during film drying. A destruction zone with radial and lateral cracks was observed
around the indenter prints, forming a pattern in the form of "butterflies". It has been established that during longterm storage and irradiation of films of diazoquinone novolac photoresists, an increase in the values of the true microhardness of the films takes place, which is due to the cross-linking of novolac macromolecules in the bulk of the polymer.
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References
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