FILMS OF POSITIVE DIAZOQUINONE-NOVOLAC PHOTORESIST FP9120 IMPLANTED WITH SILVER IONS

Main Article Content

S. VABISHCHEVICH
N. VABISHCHEVICH
D. BRINKEVICH
V. PROSOLOVICH

Abstract

Films of positive diazoquinone-novolac photoresist FP9120 1,8 μm thick, implanted with Ag+ ions with an energy of 30 keV in the dose range of 2,5∙1016 – 1,0∙1017 cm–2, were studied by indentation using an ILU-3 implanter. It has been established that a freshly prepared film of the positive photoresist FP9120 on silicon exhibits elastic-plastic properties and, after its indentation, an elastic recovery of the imprint is observed. The carbonized layer formed during ion implantation of Ag+ with doses above 2,5∙1016 cm–2 suppresses the effect of imprint restoration during indentation. After long-term storage (more than 3 years), the film changes its strength properties and behaves like a solid (non-plastic) body. This is due to the cross-linking of phenol-formaldehyde resin molecules, which reduces the mobility of molecules under external influence. A continuous diamond-like carbonized layer formed in the range of ions. when implanted with Ag+ ions, it contributes to an increase in the values of the true microhardness of the photoresistive film after long-term storage.

Article Details

How to Cite
VABISHCHEVICH, S., VABISHCHEVICH, N., BRINKEVICH, D., & PROSOLOVICH, V. (2023). FILMS OF POSITIVE DIAZOQUINONE-NOVOLAC PHOTORESIST FP9120 IMPLANTED WITH SILVER IONS. Vestnik of Polotsk State University. Part C. Fundamental Sciences, (2), 42-47. https://doi.org/10.52928/2070-1624-2023-41-2-42-47
Section
Электрофизика, электрофизические установки (технические науки)
Author Biographies

S. VABISHCHEVICH, Euphrosyne Polotskaya State University of Polotsk

канд. физ.-мат. наук, доц.

D. BRINKEVICH, Belarusian State University, Minsk

канд. физ.-мат. наук

V. PROSOLOVICH, Belarusian State University, Minsk

канд. физ.-мат. наук, доц.

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