FILMS OF POSITIVE DIAZOQUINONE-NOVOLAC PHOTORESIST FP9120 IMPLANTED WITH SILVER IONS
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Abstract
Films of positive diazoquinone-novolac photoresist FP9120 1,8 μm thick, implanted with Ag+ ions with an energy of 30 keV in the dose range of 2,5∙1016 – 1,0∙1017 cm–2, were studied by indentation using an ILU-3 implanter. It has been established that a freshly prepared film of the positive photoresist FP9120 on silicon exhibits elastic-plastic properties and, after its indentation, an elastic recovery of the imprint is observed. The carbonized layer formed during ion implantation of Ag+ with doses above 2,5∙1016 cm–2 suppresses the effect of imprint restoration during indentation. After long-term storage (more than 3 years), the film changes its strength properties and behaves like a solid (non-plastic) body. This is due to the cross-linking of phenol-formaldehyde resin molecules, which reduces the mobility of molecules under external influence. A continuous diamond-like carbonized layer formed in the range of ions. when implanted with Ag+ ions, it contributes to an increase in the values of the true microhardness of the photoresistive film after long-term storage.
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References
Moreau, W. M. (1988). Semiconductor Lithography: Principles, Practices, and Materials. N.Y.; London: Plenum Press.
Brinkevich, S. D., Grinyuk, E. V., Brinkevich, D. I., & Prosolovich, V. S. (2020). Modification of Diazoquinone–Novolac Photoresist Films beyond the Region of Implantation of B+ Ions. High energy chemistry, 54(5), 342–351. DOI: 10.1134/S0018143920050045.
Vabishchevich, S. A., Brinkevich, S. D., Vabishchevich, N. V., Brinkevich, D. I., & Prosolovich, V. S. (2021). Adhesion of Irradiated Diazoquinone-Novolac Photoresist Films to Single-Crystal Silicon. High Energy Chemistry, 55(6), 495–501. DOI: 10.1134/S0018143921060151.
Vabishchevich, S., Brinkevich, S., Prosolovich, V., Vabishchevich, N., & Brinkevich, D. (2020). Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 14(6), 1352–1357. DOI: 10.1134/S1027451020060476.
Kharchenko, A. A., Brinkevich, D. I., Prosolovich, V. S., Brinkevich, S. D., Odzaev, V. B., & Yankovski, Yu. N. (2020). Kharchenko, A. A. Radiation-Stimulated Transformation of the Reflectance Spectra of Diazoquinone–Novolac Photoresist Films Implanted with Antimony Ions. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 14(3), 558–561. DOI: 10.1134/S1027451020030283.
Brinkevich, S. D., Brinkevich, D. I., & Prosolovich, V. S. (2021). Modification of Diazoquinone-Novolac Photoresist Films by the Implantation of Antimony Ions. Russian Microelectronics, 50(1), 33–38. DOI: 10.1134/S1063739720060025.
Brinkevich, D. I., Brinkevich, S. D., & Prosolovich, V. S. (2022). Ion Implantation in Diazoquinone-Novolac Photoresist High Energy Chemistry, 56(4), 270–276. DOI: 10.1134/S0018143922040051.
Brinkevich, D. I., Vabishchevich, N. V., & Vabishchevich, S. A. (2010). Fiziko-mekhanicheskie svoistva epitaksial'nykh sloev fosfida galliya [Physicomechanical Properties of Epitaxial Layers Gallium Phosphide]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (9), 92–97. (In Russ., abstr. in Engl.).
Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, D. I., & Prosolovich, V. S. (2020). Fiziko-mekhanicheskie svoistva obluchennykh plenok diazokhinon-novolachnogo fotorezista na kremnii [Physical and Mechanical Properties of Irradiated Films of Diazoquinone-Novolach Photoresist on Silicon]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (12), 60–64. (In Russ., abstr. in Engl.).
Shugurov, A. R., Panin, A. V., & Oskomov, K. V. (2008). Osobennosti opredelenija mehanicheskih harakteristik tonkih plenok metodom nanoindentirovanija. Fizika tverdogo tela [Physics of the Solid State], 50(6), 1007–1012. (In Russ.).
Vabishchevich, S. A., Vabishchevich, N. V., Brinkevich, D. I., Brinkevich, S. D., & Prosolovich, V. S. (2016). Mikrotverdost' plenok sopolimerov na osnove metilmetakrilata, obluchennykh γ-kvantami [Microhardness of γ-Irradiated Films of Copolymers Based on Methyl Methacrylate]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (12), 51–57. (In Russ., abstr. in Engl.).
Brinkevich, D. I., Kharchenko, A. A., Brinkevich, S. D., Lukashevich, M. G., Odzhaev, V. B., Valeev, V. F., … Khaibullin, R. I. (2017). Radiation-induced modification of reflection spectra beyond the ion path region in polyimide films. Journal of Surface Investigation. X-ray, synchrotron and neutron techniques, 11(4), 801–806. DOI: 10.1134/S1027451017040188.
Vabishсhevich, S.A., Vabishсhevich, N.V., Espinoza de los Monteros, Brinkevich, D. I., & Prosolovich, V. S. (2020). Radiaczionno-induczirovannye proczessy v plenkakh diazokhinon-novolachnogo rezista na kremnii pri implantaczii ionov Ag+ [Radiation-induced processes in films of diazoquinone-novolac resist on silicon during implantation of Ag+ ions]. Vestnik Polotskogo gosudarstvennogo universiteta. Seriya C, Fundamental'nye nauki [Herald of Polotsk State University. Series С. Fundamental sciences], (4), 43–47.
Debmalya, R., Basu, P. K., Raghunathan, P., & Eswaran, S. V. (2003). DNQ-novolac photoresist revisited: 1H and 13C NMR evidence for a novel photoreaction mechanism. Magnetic resonance in chemistry, 41(2), 84–90. DOI: 10.1002/mrc.1134.
Brinkevich D. I., Brinkevich S. D., Vabishchevich N. V., Odzhaev V. B., & Prosolovich V. S. (2014). Ionnaya implantatsiya pozitivnykh fotorezistov [Ion implantation of positive photoresists]. [Russian Microelectronics], 43(3), 194–200. DOI: 10.1134/S106373971401003X. (In Russ.).
Kharchenko, A. A., Brinkevich, D. I., Brinkevich, S. D., & Prosolovich, V. S. (2023). Radiaczionno-induczirovannaya modifikacziya spektrov otrazheniya plenok diazokhinonno-volachnogo fotorezista pri implantaczii ionov Ag+. Khimiya vysokikh energij [High energy chemistry], 57(6), 456–471. DOI: 10.31857/S0023119323060062. (In Russ.).
Ostrovskii, V. S. (2009). Hardness of Carbon Materials. Solid Fuel Chemistry, 43(5), 314–317. DOI: 10.3103/S0361521909050103.
Korshunov, S. N., Lebedev, A. M., Martynenko. Yu. V., Svechnikov, N. Yu., & Skorlupkin, I. D. (2019). Izmenenie struktury osazhdaemykh uglerodnykh plenok pri elektronnom assistirovanii [Structure Changes in Carbon Films Obtained by Electron-Beam Assisted Deposition]. Poverkhnost. Rentgenovskie, sinhrotronnye i neitronnye issledovamiya [Journal of Surface Investigation. X-ray, synchrotron and neutron techniques], (4), 56–64.
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