MODIFICATION OF THE SURFACE LAYERS OF SILICON SINGLE CRYSTALS IMPLANTED WITH B+ AND P+ IONS AT THE CREATION OF SEMICONDUCTOR DEVICES BY CMOS TECHNOLOGY

Article Sidebar

Abstract views: 30
PDF Downloads: 12
pdf (rus) (Русский)
Published: Mar 30, 2015

Main Article Content

D. BRINKEVICH
Belarusian State University, Minsk
S. VABISHCHEVICH
Polotsk State University
V. PROSOLOVICH
Belarusian State University, Minsk
Y. YANKOVSKI
Belarusian State University, Minsk

Abstract

Properties of the surface layers of monocrystalline silicon wafers implanted with boron and phosphorus to form a heavily doped “pockets” of CMOS structures was investigated by mass spectrometry of secondary ions, measuring the surface resistivity and microhardness. Near-surface hardening of single crystals during implantation was founded. Amorphization of the implanted region of silicon reduces the microhardness of the surface layer. Rapid thermal annealing leads to a softening of the surface layer of the of the silicon single crystal to a depth of 1 μm and an increase in fracture toughness (K1C and γ) at low loads. The experimental results are discussed in terms of the generation of vacances in the process of rapid thermal annealing.

Article Details

How to Cite
BRINKEVICH, D., VABISHCHEVICH, S., PROSOLOVICH, V., & YANKOVSKI, Y. (2015). MODIFICATION OF THE SURFACE LAYERS OF SILICON SINGLE CRYSTALS IMPLANTED WITH B+ AND P+ IONS AT THE CREATION OF SEMICONDUCTOR DEVICES BY CMOS TECHNOLOGY. Vestnik of Polotsk State University. Part C. Fundamental Sciences, (4), 55-59. Retrieved from https://journals.psu.by/fundamental/article/view/5585
Issue
No. 4 (2015)
Section
Physics
Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Author Biographies

D. BRINKEVICH, Belarusian State University, Minsk

канд. физ.-мат. наук

S. VABISHCHEVICH, Polotsk State University

канд. физ.-мат. наук, доц.

V. PROSOLOVICH, Belarusian State University, Minsk

канд. физ.-мат. наук, доц.

Y. YANKOVSKI, Belarusian State University, Minsk

канд. физ.-мат. наук

References

Технология СБИС: в 2-х кн. Кн. 1 / под ред. С. Зи. – М.: Мир, 1986. – С. 235–353.

Колесников, Ю.В. Механика контактного разрушения / Ю.В. Колесников, Е.М. Морозов. – М.: Наука, 1989. – 220 с.

Соколов, В.И. Некоторые характеристики пористого кремния (отражение, рассеяние, показатель преломления, микротвердость) / В.И. Соколов, А.И. Шелых // Письма в ЖТФ. – 2008. – Т. 34, № 5. – С. 34–39.

Patent 6686620 US, primary class 438/473 / R.J. Falster, M.J. Binns, H.W. Korb; publication 03.02.2004.

Voronkov, V.V. Effect of vacancies on nucleation of oxide precipitates in silicon / V.V. Voronkov, R. Falster // Materials science in semiconductor processing. – 2003. – V. 5 – P. 387–390.

Головин, Ю.И. Недислокационная пластичность и ее роль в массопереносе и формировании отпечатка при динамическом индентировании / Ю.И. Головин, А.А. Дмитриевский, Н.Ю. Сучкова // Физика твердого тела. – 2006. – Т. 48, № 2. – С. 262–265.

Головин, Ю.И. Структура комплексов, ответственных за радиационно-стимулированное разупрочнение монокристаллов кремния / Ю.И. Головин, А.И. Тюрин // Физика твердого тела. – 2000. – Т. 42, № 10. – С. 1818–1820.