STUDY OF STRENGTH PROPERTIES OF PHOTORESIST FILMS ON SILICON BY THE SCRATCHING METHOD
Article Sidebar
Main Article Content
Abstract
The strength properties of the structures of the photoresist-silicon was investigated by indenting and scratching methods. Film positive photoresist with thickness of 1.0–5.0 μm was deposited on silicon wafers of various brands by the centrifugation method. It was found that the microhardness as determined by sclerometer, 20–40 % more than microhardness obtained by the microindentation methods. When using the load, which equals 1–2 g, more accurate values of microhardness gives the scratching method. Increasing the load to 10 or more grams leads to a leveling of the specified differences – values of microhardness obtained by both methods coincide.
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
References
Моро, У. Микролитография. Принципы, методы, материалы : в 2 ч. / У. Моро. – М. : Мир, 1990. – Ч. 2. – 632 с.
Наконечники и бойки алмазные к приборам для измерения твердых металлов и сплавов. Технические условия : ГОСТ 9377-81. – М. : Изд-во стандартов, 1981. – 10 с.
Измерение микротвердости царапанием алмазными наконечниками : ГОСТ 21318-75. – введ. 01.07.76 г. – М. : Изд-во стандартов, 1976. – 30 с.
Бринкевич, Д.И. Микромеханические свойства эпитаксиальных слоев GaP, легированных редкоземельным элементом диспрозием / Д.И. Бринкевич, Н.В. Вабищевич, В.С. Просолович // Неорганические материалы. – 2012. – Т. 48, № 8. – С. 878–883.
Измерение микротвердости вдавливанием алмазных наконечников : ГОСТ 9450-76. – введ. 01.01.77 г. : с изм. – М. : Изд-во стандартов, 1993. – 35 с.
Most read articles by the same author(s)
- S. VABISHCHEVICH, A. VASUKOV, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, ATOMIC-POWER MICROSCOPY OF FILMS OF POSITIVE DIAZOKHINONNOVOLACHNY PHOTORESIST IMPLANTED BY BORON IONS , Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 12 (2018)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, M. TARASIK, THE LIFETIME OF CHARGE CARRIERS IN PLATES OF SINGLE CRYSTALLINE SILICON WITH FILMS OF A DIAZOQUINON-NOVOLAC PHOTORESIST, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2021)
- A. VASUKOV, S. VABISHCHEVICH, N. SUKHOVILO, N. VABISHCHEVICH, RESEARCH OF SURFACE OF ASPHALTENES BY ATOMIC-POWER MICROSCOPY, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2020)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, INDENTATION OF ELECTRON-IRRAUDED FILMS OF DIAZOQUINONE NOVOLAC PHOTORESISTS ON SILICONE, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2023)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, RADIATION-INDUCED PROCESSES IN PYROLITIC GRAPHITE FILMS USED IN THE COMMERCIAL CYCLOTRON BEAM OUTPUT SYSTEM, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 12 (2019)
- S. RAHOUSKI, V. TANANA, N. VABISHCHEVICH, S. VABISHCHEVICH, IMAGE PROCESSING FOR DETERMINING STRENGTH PARAMETERS OF POLYMER FILMS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2021)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, CRACK RESISTANCE OF DIAZOQUINONE-NOVOLACH PHOTORESIST FILMS ON MONOCRYSTALLINE SILICON PLATES, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2021)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, V. KOLOS, O. ZUBOVA, STRENGTH PROPERTIES OF ELECTRON IRRADIATED FILMS OF NEGATIVE NOVOLAC PHOTORESISTS ON MONOCRYSTALLINE SILICON, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 2 (2023)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, M. LUKASHEVICH, A. YUSHCHIK, A. KHARCHENKO, POLYIMIDE FILMS IMPLANTED BY MANGANESE IONS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2024)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, M. SHULYAKOVSKAYA, V. KOLOS, O. ZUBOVA, ELECTRON IRRADIATED PI2610 POLYIMIDE FILMS ON MONOCRYSTALLINE SILICON, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2024)