THE ELEMENTAL COMPOSITION OF NEGATIVE PHOTORESISTS FOR LIFT-OFF LITHOGRAPHY
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Abstract
Films of negative photoresists (PRs) KMP E3502, AZ nLOF 2020, 2070, and 5510 with thicknesses of 0,9–6,0 μm, deposited on the surface of silicon wafers by spincoating, were studied using X-ray microanalysis. The X-ray spectra of all PRs films contained lines due to carbon and oxygen, with the carbon line being the dominant one. A silicon-related line, caused by electron beam penetration into the substrate, was also observed in thin films. Its intensity decreases with increasing photoresist thickness and disappears from the spectrum at film thicknesses > 5 μm. A sulfur band was also observed in the AZ nLOF films. The NO/NC ratio (in atomic %) varies among photoresists from the same manufacturer, owing to the different substituent compositions of phenol-formaldehyde resin oligomers – the film-forming component of the studied photoresists. Stabilizing treatment and ion beam etching of photoresist films resulted in changes in the oxygen-to-carbon NO/NC ratio due to several competing mechanisms. Ion beam etching of photoresist films resulted in the formation of a mechanically strong carbon layer on their surface, resistant to chemical solvents. Dissolution of ion-etched photoresist films in alcohol vapor occurs only through cracks in the carbon layer.
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References
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