PHYSICO-MECHANICAL PROPERTIES OF KMP E3502 NEGATIVE PHOTORESIST FILMS ON SILICON
Article Sidebar
Main Article Content
Abstract
Films of negative photoresists (FR) KMP E3502 with a thickness of 2,6–5,8 microns deposited on the surface of silicon wafers by centrifugation have been studied by the indentation method. It was experimentally established that the strength and adhesive properties of the KMP E3502 films are close to the similar properties of the AZ nLOF 20XX series. The fracture toughness coefficient K1C films of the КМР E3502 increases with an increase in the load. Neither additional strengthening nor ion etching had a significant impact on their crack resistance. Adhesis (specific energy of peeling G) of thin films is 3 times lower compared to thick films of the КМР E3502. The values of G thick КМР E3502 film are close to the size G of the initial film AZ nLOF2070. Additional strength-ening and ionic etching did not have a significant impact on the adhesion of the photoresistic film of the КМР E3502 to silicon substrate. The true microhardness of КМР E3502 thin films was 0,3 GPa and was ~ 2 times higher than the microhardness of similar functional AZ nLOF5510 films. After stabilizing processing and ion etching, it increased, which is due to the sewing of the photoresist molecules. In thick films of КМР E3502, the microhardness increased with distance from the film surface and stabilized at ~ 0.55 GPa as it approached the photoresist/silicon interface. This behavior of microhardness is due to uneven heating of the film during drying during its formation, since heating was carried out from the substrate. The obtained experimental data are explained taking into account the ordering of the photoresist film structure near the PR/silicon interface due to the orientation of molecules and conformational changes in the structure of the main component of the photoresist – phenol-formaldehyde resin. Radiation-stimulated processes occurring during etching of CMR E3502 films with Ar ions are caused by the formation of covalent crosslinking between polymer molecules, which contribute to the hardening of the film.
Article Details

This work is licensed under a Creative Commons Attribution 4.0 International License.
S. VABISHCHEVICH, Euphrosyne Polotskaya State University of Polotsk
канд. физ.-мат. наук, доц.
D. BRINKEVICH, Belarusian State University, Minsk
канд. физ.-мат. наук
V. PROSOLOVICH, Belarusian State University, Minsk
канд. физ.-мат. наук, доц.
S. BRINKEVICH, LLC “My Medical Center – High Technologies”, Vsevolozhsk, Russia
канд. хим. наук, доц.
References
Отражательно-абсорбционная ИК Фурье-спектроскопия фоторезистивных пленок на кремнии / Д. И. Бринкевич, Е. В. Гринюк, В. С. Просолович и др. // Приборы и методы измерений. – 2025. – Т. 16, № 1 – С. 69–76. – DOI: 10.21122/2220-9506-2025-16-1-69-76.
Пленки фоторезистов серии AZ nLOF на монокристаллическом кремнии / Д. И. Бринкевич, Е. В. Гринюк, В. С. Просолович и др. // Микроэлектроника. – 2025. – Т. 54, № 1. – С. 55–63.
Модификация спектров отражения пленок диазохинон-новолачного фоторезиста при имплантации ионами бора и фосфора / Д. И. Бринкевич, А. А. Харченко, В. С. Просолович и др. // Микроэлектроника – 2019. – Т. 48, № 3. – С. 235–239. – DOI: 10.1134/S0544126919020029.
Бринкевич Д. И., Вабищевич Н. В., Вабищевич С. А. Прочностные свойства термообработанного кремния, выращенного в магнитном поле // Вестн. Полоц. гос. ун-та. Сер. С, Фундам. науки. – 2009. – № 3. – С. 152–157.
Вабищевич С. А., Вабищевич Н. В., Бринкевич Д. И. Микротвердость пластин кремния, прошедшего геттерирующую термообработку // Перспективные материалы. – 2005. – № 2. – С. 20–22.
Бринкевич Д. И., Вабищевич Н. В., Вабищевич С. А. Физико-механические свойства эпитаксиальных слоев фосфида галлия // Вестн. Полоц. гос. ун-та. Сер. С, Фундам. науки. – 2010. – № 9. – C. 92–97.
Адгезия к монокристаллическому кремнию пленок диазохинонноволачных фоторезистов, облученных электронами / С. А. Вабищевич, Н. В. Вабищевич, С. Д. Бринкевич и др. // Химия высоких энергий. – 2024. – T. 58, № 1. – С. 60–68.
Вабищевич С. А., Вабищевич Н. В., Бринкевич Д. И. Микротвердость пластин кремния, прошедшего геттерирующую обработку // Перспективные материалы. – 2005. – № 2. – С. 20–22.
Индентирование пленок негативных фоторезистов для обратной литографии / С. А. Вабищевич, Д. И. Бринкевич, В. С. Просолович и др. // Вестн. Полоц. гос. ун-та. Сер. С, Фундам. науки. – 2025. – № 1(44). – C. 53–60. – DOI: 10.52928/2070-1624-2025-44-1-53-60.
Adhesion of Electron-Irradiated Diazoquinone–Novolac Photoresist Films to Single-Crystal Silicon / S. A. Vabishchevich, N. V. Vabishchevich, S. D. Brinkevich et al. // High Energy Chemistry. – 2024. – Vol. 58, iss. 1. – P. 112–119. – DOI: 10.1134/S001814392401017X.
Прочностные свойства пленок фоторезиста AZ nLOF 5510 / С. А. Абрамов, Д. И. Бринкевич, В. С. Просолович и др. // Материалы 17-й Междунар. науч.-техн. конф. «Приборостроение – 2024» (26–29 нояб. 2024 г.) / Белорус. нац. техн. ун-т. – Минск, 2024. – С. 106–108.
Ионная имплантация позитивных фоторезистов / Д. И. Бринкевич, С. Д. Бринкевич, Н. В. Вабищевич и др. // Микроэлектроника. – 2014. – Т. 43, № 3. – C. 193–199. – DOI: 10.7868/S0544126914010037.
Lu Xiaolin, Mi Yongli. Characterization of the interfacial interaction between polyacrylamide and silicon substrate by Fou-rier transform infrared spectroscopy // Macromolecules. – 2005. – Vol. 38, iss. 3. – С. 839–843.
Власов С. В., Кулизнев В. Н. Ориентированное состояние полимеров. –М.: Знание, 1987. – 48 с.
Effect of Ion Implantation on the Adhesion of Positive Diazoquinone-Novolak Photoresist Films to Single-Crystal Silicon / S. A. Vabishchevich, S. D. Brinkevich, V. S. Prosolovich et al. // Journal of Surface Investigation. X-Ray, Synchrotron and Neutron Techniques – 2020. – Vol. 14, iss. 6. – P. 1352–1357. – DOI: 10.1134/S1027451020060476.
Most read articles by the same author(s)
- A. KIYKO, S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, ACCUMULATION OF RADIONUCLIDES IN REPLACEABLE PARTS AND WATER TARGET CYCLOTRON, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2022)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, V. KOLOS, O. ZUBOVA, STRENGTH PROPERTIES OF PHOTORESISTS FOR EXPLOSIVE LITHOGRAPHY, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2022)
- D. SHESTOVSKY, D. BRINKEVICH, V. PROSOLOVICH, U. YANKOVSKY, S. VABISHCHEVICH, N. VABISHCHEVICH, MODIFICATION OF DIAZOQUINONE-NOVOLACH PHOTORESIST FILMS BY IMPLANTATION OF BORON AND PHOSPHORUS IONS AT INCREASED IONIC CURRENT DENSITY, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 12 (2021)
- S. ZMITROVICH, S. VABISHCHEVICH, D. SHABANOV, AUTOMATED PHYSICAL MEASUREMENT SYSTEM, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2019)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, INDENTATION OF ELECTRON-IRRAUDED FILMS OF DIAZOQUINONE NOVOLAC PHOTORESISTS ON SILICONE, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2023)
- A. KIYKO, S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, РАДИОЛОГИЧЕСКИЕ АСПЕКТЫ ВЫВОДА ЦИКЛОТРОНА ИЗ ЭКСПЛУАТАЦИИ, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 11 (2022)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, M. SHULYAKOVSKAYA, V. KOLOS, O. ZUBOVA, ELECTRON IRRADIATED PI2610 POLYIMIDE FILMS ON MONOCRYSTALLINE SILICON, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2024)
- S. VABISHCHEVICH, Н. В. ВАБИЩЕВИЧ, G.A. ESPINOZA de los MONTEROS, D. BRINKEVICH, V. PROSOLOVICH, RADIATION-INDUCED PROCESSES IN FILMS OF DIAZOQUINONE-NOVOLAC RESIST ON SILICON DURING IMPLANTATION OF Ag+ IONS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2020)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, M. TARASIK, THE LIFETIME OF CHARGE CARRIERS IN PLATES OF SINGLE CRYSTALLINE SILICON WITH FILMS OF A DIAZOQUINON-NOVOLAC PHOTORESIST, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2021)
- A. KIYKO, S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, APPLICATION ANALYSIS OF THE GAMMA-BETA SPECTROMETER MKS-AT1315 TO CONTROL UNWANTED RADIONUCLIDES, FORMED DURING THE PRODUCTION OF RADIOPHARMACEUTICALS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2023)