THE LIFETIME OF CHARGE CARRIERS IN PLATES OF SINGLE CRYSTALLINE SILICON WITH FILMS OF A DIAZOQUINON-NOVOLAC PHOTORESIST
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Abstract
The lifetime of nonequilibrium charge carriers τ in monocrystalline silicon wafers with films of diazoquinone- novolac resist FP9120 and SPR700 deposited on its surface was measured by the phase method using contactless microwave technology in the three-centimeter range. It was found that the lifetime values at the center of the plate are slightly higher than at the edge. The surface lifetime τs was lower than the bulk lifetime τv. Longterm storage led to a decrease in the lifetime, which was most pronounced in the case of τs. This is presumably due to the accumulation of fast-diffusing deep impurities in the silicon wafer. The implantation of boron and phosphorus ions led to a decrease in the values of τv due to heating (up to ~ 70oС) of the silicon wafer during implantation. The surface lifetime τs during irradiation with γ-quanta with a dose higher than 1 kGy decreases more intensively than the bulk τv, which is most likely due to the breaking of Si–O–C bonds at the photoresist/silicon interface.
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References
Диоды полупроводниковые. Методы измерения эффективного времени жизни неравновесных носителей заряда : ГОСТ 18986.7-73. – М. : Издательство стадартов, 1973. – 6 с.
Моро, У. Микролитография. Принципы, методы, материалы : в 2-х ч. / У. Моро. – М. : Мир, 1990. – 632 с. – Ч. 2.
Ионная имплантация позитивных фоторезистов / Д.И. Бринкевич [и др.] // Микроэлектроника. – 2014. – Т. 43, № 3. – C. 193–199.
Бураков, А.В. Бесконтактный измеритель времени жизни неравновесных носителей заряда / А.В.Бураков, С.Н. Якубеня, А.М.Янченко // Приборы и техника эксперимента. – 1986. – № 4. – C. 226.
Радиационно-стимулированная трансформация спектров отражения пленок диазохинон-новолачного фоторезиста при имплантации ионов сурьмы / А.А. Харченко [и др.] // Поверхность. Рентген., синхротр. и нейтрон. исслед. – 2020. – № 6. – С. 14–18.
Модификация спектров отражения пленок диазохинон-новолачного фоторезиста при имплантации ионами бора и фосфора / Д.И. Бринкевич [и др.] // Микроэлектроника – 2019. – Т. 48, № 3. – С. 235–239.
Mechanism of the Adhesive Interaction of Diazoquinone-Novolac Photoresist Films with Monocrystalline Silicon / S.D. Brinkevich [et al.] // J. of Applied Spectroscopy. – 2020. – Vol. 87, № 4. – Р. 647–651. – DOI 10.1007/s10812-020-01049-4.
Физико-механические свойства облученных пленок диазохинон-новолачного фоторезиста на кремнии / C.А. Вабищевич [и др.] // Вестн. Полоц. гос. ун-та. Сер. С, Фундам. науки. – 2020. – № 12. – C. 60–64.
Radiation-Induced Processes in Diazoquinone–Novolac Resist Films under Irradiation with 60Co γ-Rays / S.D. Brinkevich [et al.] // High Energy Chemistry. – 2021. – Vol. 55, № 1. – P. 65–74.
Адгезионные и прочностные свойства пленок диазохинон-новолачного фоторезиста на кремнии, облученных гамма-квантами / C.А. Вабищевич [и др.] // Материалы и структуры современной электроники : сб. науч. тр. IX Междунар. науч. конф., Минск, 14–16 окт. 2020 г. / Белорус. гос. ун-т ; редкол.: В.Б. Оджаев (отв. ред.) [и др.]. – Минск, 2020. – С. 161–166.
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