THE LIFETIME OF CHARGE CARRIERS IN PLATES OF SINGLE CRYSTALLINE SILICON WITH FILMS OF A DIAZOQUINON-NOVOLAC PHOTORESIST
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Abstract
The lifetime of nonequilibrium charge carriers τ in monocrystalline silicon wafers with films of diazoquinone- novolac resist FP9120 and SPR700 deposited on its surface was measured by the phase method using contactless microwave technology in the three-centimeter range. It was found that the lifetime values at the center of the plate are slightly higher than at the edge. The surface lifetime τs was lower than the bulk lifetime τv. Longterm storage led to a decrease in the lifetime, which was most pronounced in the case of τs. This is presumably due to the accumulation of fast-diffusing deep impurities in the silicon wafer. The implantation of boron and phosphorus ions led to a decrease in the values of τv due to heating (up to ~ 70oС) of the silicon wafer during implantation. The surface lifetime τs during irradiation with γ-quanta with a dose higher than 1 kGy decreases more intensively than the bulk τv, which is most likely due to the breaking of Si–O–C bonds at the photoresist/silicon interface.
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References
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