STRENGTH PROPERTIES OF FP9120 PHOTORESIST-SILICON STRUCTURES
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Abstract
Films of the FP9120 positive photoresist thickness of 1,0…5,0 microns deposited on silicon wafers by spin coating was investigated by the atomic force microscopy and indentation. It has been shown that the roughness of the photoresist film was ranged at 0,18 to 0,30 nm, increasing sharply when the film thickness ~ 5 microns, due likely to the formation of thick layers in two stages. Zone destructive indentation increases as the indenter to the interface silicon and photoresist – crossing this boundary reaches a steady state value. The average diameter of the zone of destruction increases with the thickness of the photoresist film.
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References
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