METHODS OF TEMPERATURE VOLTAGE COMPENSATION ELECTRICAL BREAKDOWN OF NOISE DIODES
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Abstract
Methods for compensating for changes in the electrical characteristics of discrete semiconductor noise diodes, as well as rectifying contacts of p-n junctions and metal-semiconductor junctions, under changing temperature conditions are investigated. Based on experimental studies of the electrophysical characteristics of noise diodes and modeling of a structure comprising a reverse-connected noise diode and a forward-connected compensat-ing diode, a method for stabilizing the microplasma breakdown voltage of ND series noise diodes manufactured by Integral Holding, Republic of Belarus, is proposed. It is established that the dependence of the microplasma breakdown voltage for these noise diodes on temperature in the range of 24–125 °C is close to linear. This allows for temperature compensation of the breakdown voltage of a noise diode by connecting it in series with a forward-connected Schottky diode, a previously unused approach due to the narrow range of microplasma breakdown currents. It has been shown that the degree of thermal compensation, characterized by the magnitude of the slope of the linear approximation of the breakdown voltage dependence on temperature, depends on the electrophysical parameters of the noise generator diode and the compensating diode. Thermal compensation of the breakdown voltage using a discrete Schottky diode resulted in a 40% reduction in the noise cutoff frequency under normal climatic conditions. However, at a temperature of 125°C, the cutoff frequency of the temperature-compensated noise diode more than doubles, reaching values characteristic of ND103L noise generator diodes. The research results suggest design and technological possibilities for expanding the operating temperature range of noise diodes in microplasma breakdown mode.
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References
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