P-I-N PHOTODIODES WITH GETTERS CREATED BY ION IMPLANTATION OF MAIN DOPING IMPURITIES
Article Sidebar
Main Article Content
Abstract
The current-voltage characteristics of p-i-n photodiodes containing getters formed by implantation of boron or antimony ions on the back side of a silicon wafer were investigated. In parallel, control samples that passed all stages of the technological process of device manufacturing except for the implantation of impurities into the non-planar side of the wafer were investigated. It was shown that after the getter formation, the electrophysical parameters of the devices depend significantly on both the type of implanted ions and the modes of subsequent precipitation and diffusion annealing. This is due, on the one hand, to the gettering of technological impurities that create deep generation-recombination centers that determine the magnitude of the reverse dark current of p-i-n photodi-odes. On the other hand, processes of defect-impurity interaction between radiation and post-technological defects such as dislocations, microdefects, etc. have a significant effect on the value of the breakdown voltage and the pre-breakdown section of the current-voltage characteristic. The presence of stepped sections on the current-voltage characteristics of p-i-n photodiodes indicates thermal generation of charge carriers from deep energy levels of non-uniformly distributed structural defects and technological impurities in the space charge region of p-i-n photodiodes.
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
References
Imaging lidars for space applications / J. Pereira do Carmo, B. Moebius, M. Pfennigbauer et al. // Novel Optical Systems Design and Optimization XI. – 2008. – Vol. 7061. – P. 70610J-01‒70610J-12.
Intersatellite link for earth observation satellites constellation / P. M. De Carlo, L. Roberto, G. Marano et al. // SPACEOPS, Roma, Italy. – 2006. – P. 19–23.
Semiconductor Devices: Physics and Technology / ed.: S. M. Sze, M.-K. Lee – 3th ed. – Hoboken, NJ: Wiley, 2012. – 592 p.
Springer Handbook of Lasers and Optics: Springer Handbooks / ed.: Träger. F. – Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. – 1694 p.
p-i-n Photodiode Based on Silicon with Short Rise Time / Yu. G. Dobrovolsky, O. P. Andreeva, M. S. Gavrilyak et al. // Journal of Nano-& Electronic Physics. – 2018. − Vol. 10, iss. 4. – P. 04019-1–04019-5.
Мильвидский М. Г., Освенский В. Б. Структурные дефекты в монокристаллах полупроводников. – М.: Металлургия.1984. – 256 c.
Создание геттера в кремнии путем имплантации ионов сурьмы / П. К. Садовский, А. Р. Челядинский, В. Б. Оджаев и др. // Физика твердого тела. – 2018. – Т. 60, № 1. – С. 22–25.
Sah C. T., Noyce R. N., Shockley W. Carrier generation and recombination in p-n junctions and p-n junction characteristics / Proceedings of the IRE. – 1957. – Vol. 45, iss. 9. – P. 1228–1243.
Seebauer E. G., Kratzer M. C. Charged semiconductor defects: structure, thermodynamics and diffusion / Springer Science & Business Media, 2008. – 312 p.
Грехов И. В., Сережкин Ю. Н. Лавинный пробой p-n-перехода в полупроводниках. – Л.: Энергия, 1980. – 152 с.
Мильвидский М. Г., Освенский В. Б. Структурные дефекты в монокристаллах полупроводников. ‒ М.: Металлургия, 1984. – 256 с.
Таланин В. И., Таланин И. Е. Применение диффузионной модели образования ростовых микродефектов для описания дефектообразования в термообработанных монокристаллах кремния // Физика твердого тела. – 2013. – Т. 55, вып. 2. – С. 247–251.
Электрофизические параметры диодов генераторов широкополосного шума / В. В. Буслюк, В. Б. Оджаев, А. К. Панфиленко и др. // Микроэлектроника. – 2020. – Т. 49, № 4. – С. 315–320.
Влияние структурных дефектов на электрофизические параметры p-i-n-фотодиодов / Н. С. Ковальчук, С. Б. Ластовский, В. Б. Оджаев и др. // Микроэлектроника. – 2023. – Т. 52, № 4. – С. 307–314.
Вопросы радиационной технологии полупроводников / Под ред. Л. С. Смирнова. – Новосибирск: Наука, 1980. – 296 с.
Вавилов B. C., Киселев В. Ф., Мукашев Б. Н. Дефекты в кремнии и на его поверхности. – М.: Наука. 1990. – 216 с.
Most read articles by the same author(s)
- A. KIYKO, S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, ACCUMULATION OF RADIONUCLIDES IN REPLACEABLE PARTS AND WATER TARGET CYCLOTRON, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2022)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, V. KOLOS, O. ZUBOVA, STRENGTH PROPERTIES OF PHOTORESISTS FOR EXPLOSIVE LITHOGRAPHY, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2022)
- D. SHESTOVSKY, D. BRINKEVICH, V. PROSOLOVICH, U. YANKOVSKY, S. VABISHCHEVICH, N. VABISHCHEVICH, MODIFICATION OF DIAZOQUINONE-NOVOLACH PHOTORESIST FILMS BY IMPLANTATION OF BORON AND PHOSPHORUS IONS AT INCREASED IONIC CURRENT DENSITY, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 12 (2021)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, INDENTATION OF ELECTRON-IRRAUDED FILMS OF DIAZOQUINONE NOVOLAC PHOTORESISTS ON SILICONE, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2023)
- A. KIYKO, S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, РАДИОЛОГИЧЕСКИЕ АСПЕКТЫ ВЫВОДА ЦИКЛОТРОНА ИЗ ЭКСПЛУАТАЦИИ, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 11 (2022)
- V. ODZAEV, U. PRASALOVICH, A. PYATLITSKI, N. KOVALCHUK, Ya. SOLOVIEV, D. ZHIGULIN, D. SHESTOVSKI, LOCALIZATION OF NITROGEN ATOMS IN Si–SiO2 STRUCTURES, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 11 (2022)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, M. SHULYAKOVSKAYA, V. KOLOS, O. ZUBOVA, ELECTRON IRRADIATED PI2610 POLYIMIDE FILMS ON MONOCRYSTALLINE SILICON, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2024)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, M. TARASIK, THE LIFETIME OF CHARGE CARRIERS IN PLATES OF SINGLE CRYSTALLINE SILICON WITH FILMS OF A DIAZOQUINON-NOVOLAC PHOTORESIST, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2021)
- A. KIYKO, S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, APPLICATION ANALYSIS OF THE GAMMA-BETA SPECTROMETER MKS-AT1315 TO CONTROL UNWANTED RADIONUCLIDES, FORMED DURING THE PRODUCTION OF RADIOPHARMACEUTICALS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2023)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, CRACK RESISTANCE OF DIAZOQUINONE-NOVOLACH PHOTORESIST FILMS ON MONOCRYSTALLINE SILICON PLATES, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2021)