FTIR SPECTROSCOPY OF KMP E3502 NEGATIVE PHOTORESIST FILMS ON MONOCRYSTALLINE SILICON
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Abstract
Films of negative photoresist (FR) KMP E3502 with a thickness of 2.62–5.9 microns deposited on the surface of silicon wafers by centrifugation have been studied by IR-Fourier spectroscopy using a diffuse reflection attachment. The most intense absorption bands in the reflective absorption spectra of KMP E3502 photoresistive films are observed in the wavelength range of 1000–1800 cm–1 and are characteristic of phenol-formaldehyde resin. Analysis of the reflection and absorption spectra of KMP E3502 films suggests that the main film-forming component of KMP E3502 photoresistive films is a mixture of phenol-formaldehyde resins. In the region of wave numbers 400–1000 cm–1, a wide band with a maximum in the region of 650–700 cm–1 was observed in thin (2.62 μm) KMP E3502 films, which is caused by processes at the photoresist/silicon interface. It is shown that with an increase in the thickness of the photoresistive film from 2.62 microns to 5.9 microns, the edge roller (thickening at the edge of the plate) increases by an order of magnitude.
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References
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