IR ADSORPTION IN NEUTRON-IRRADIATED SILICON DOPED WITH ALUMINIUM
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Abstract
The radiation-induced defects in Al-, Ga- and In-doped silicon are studied by the Hall-effect and IR absorption measurements methods. In spectral region 1…10 μm a number of narrow IR bands has been detected. This bands are connected with electron transitios on Al-containing radiation defects. The possible classification based on the annealing results has been stated.
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References
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