STUDY OF STRENGTH PROPERTIES OF PHOTORESIST FILMS ON SILICON BY THE SCRATCHING METHOD
Article Sidebar
Main Article Content
Abstract
The strength properties of the structures of the photoresist-silicon was investigated by indenting and scratching methods. Film positive photoresist with thickness of 1.0–5.0 μm was deposited on silicon wafers of various brands by the centrifugation method. It was found that the microhardness as determined by sclerometer, 20–40 % more than microhardness obtained by the microindentation methods. When using the load, which equals 1–2 g, more accurate values of microhardness gives the scratching method. Increasing the load to 10 or more grams leads to a leveling of the specified differences – values of microhardness obtained by both methods coincide.
Article Details
This work is licensed under a Creative Commons Attribution 4.0 International License.
References
Моро, У. Микролитография. Принципы, методы, материалы : в 2 ч. / У. Моро. – М. : Мир, 1990. – Ч. 2. – 632 с.
Наконечники и бойки алмазные к приборам для измерения твердых металлов и сплавов. Технические условия : ГОСТ 9377-81. – М. : Изд-во стандартов, 1981. – 10 с.
Измерение микротвердости царапанием алмазными наконечниками : ГОСТ 21318-75. – введ. 01.07.76 г. – М. : Изд-во стандартов, 1976. – 30 с.
Бринкевич, Д.И. Микромеханические свойства эпитаксиальных слоев GaP, легированных редкоземельным элементом диспрозием / Д.И. Бринкевич, Н.В. Вабищевич, В.С. Просолович // Неорганические материалы. – 2012. – Т. 48, № 8. – С. 878–883.
Измерение микротвердости вдавливанием алмазных наконечников : ГОСТ 9450-76. – введ. 01.01.77 г. : с изм. – М. : Изд-во стандартов, 1993. – 35 с.
Most read articles by the same author(s)
- A. KIYKO, S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, ACCUMULATION OF RADIONUCLIDES IN REPLACEABLE PARTS AND WATER TARGET CYCLOTRON, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2022)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, V. KOLOS, O. ZUBOVA, STRENGTH PROPERTIES OF PHOTORESISTS FOR EXPLOSIVE LITHOGRAPHY, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2022)
- D. SHESTOVSKY, D. BRINKEVICH, V. PROSOLOVICH, U. YANKOVSKY, S. VABISHCHEVICH, N. VABISHCHEVICH, MODIFICATION OF DIAZOQUINONE-NOVOLACH PHOTORESIST FILMS BY IMPLANTATION OF BORON AND PHOSPHORUS IONS AT INCREASED IONIC CURRENT DENSITY, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 12 (2021)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, V. KOLOS, O. ZUBOVA, OPTICAL AND STRENGTH PROPERTIES OF SACRIFICIAL LAYERS BASED ON POLYIMIDE FILMS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 11 (2022)
- S. ZMITROVICH, S. VABISHCHEVICH, D. SHABANOV, AUTOMATED PHYSICAL MEASUREMENT SYSTEM, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2019)
- S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, V. PROSOLOVICH, PHYSICAL AND MECHANICAL PROPERTIES OF IRRADIATED FILMS OF DIAZOQUINONE-NOVOLACH PHOTORESIST ON SILICON, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 12 (2020)
- A. KIYKO, S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, РАДИОЛОГИЧЕСКИЕ АСПЕКТЫ ВЫВОДА ЦИКЛОТРОНА ИЗ ЭКСПЛУАТАЦИИ, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 11 (2022)
- S. VABISHCHEVICH, Н. В. ВАБИЩЕВИЧ, G.A. ESPINOZA de los MONTEROS, D. BRINKEVICH, V. PROSOLOVICH, RADIATION-INDUCED PROCESSES IN FILMS OF DIAZOQUINONE-NOVOLAC RESIST ON SILICON DURING IMPLANTATION OF Ag+ IONS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2020)
- D. BRINKEVICH, С. Д. БРИНКЕВИЧ, S. VABISHCHEVICH, V. KROT, A. MALIBORSKI, LONG-LIVING β-RADIATING RADIONUCLIDES IN THE MANUFACTURE OF RADIOPHARMATIC DRUGS BASED ON 18F, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 4 (2019)
- A. KIYKO, S. VABISHCHEVICH, N. VABISHCHEVICH, D. BRINKEVICH, APPLICATION ANALYSIS OF THE GAMMA-BETA SPECTROMETER MKS-AT1315 TO CONTROL UNWANTED RADIONUCLIDES, FORMED DURING THE PRODUCTION OF RADIOPHARMACEUTICALS, Vestnik of Polotsk State University. Part C. Fundamental Sciences: No. 1 (2023)