FILMS OF THE NEGATIVE PHOTORESIST AZ nLOF 5510, IRRADIATED BY ELECTRONS
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Abstract
The method of IR-spectroscopy using a module for diffuse reflection, the films of negative photoresists AZ nLOF 5510 thick of 0,99 μm, applied to the surface of the silicon plates by centrifugation, were studied. Electron irradiation with an energy of 3,5 MeV dose to 7∙1016 cm-2 was carried out on ELU-4 linear accelerator of electrons. It is shown that the carbon-hydrogen bonds of the main component of the photoresist – phenol-formaldehyde resin - are stable up to doses ~ (1–3)∙1016 cm-2. The bands associated with the solvent disappear from the spectrum at doses of irradiation < 1∙1015 cm-2. In the interval of wave numbers 1620–1660 cm-1 during irradiation bands arise due to formaldehyde formed as a result of the β-fragmentation of oxygen-centered radical. Bands associated with the vibrations of the aromatic ring are quite stable. Their intensity is significantly reduced only at the dose of F = 7∙1016 cm-2. In the area of valence fluctuations of multiple C=O bonds, overlapping, a complex restructuring of the spectrum was observed, due to several processes that occur due to the interaction of the components of the photoresist during radiation with electrons. In particular, the transformation of the nearest deputies of C=O bonds may be observed, the cross-linking of molecules, an increase in the number of conjugated multiple bonds as a result of the formation of chinoid structures.
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